DMTH6002LPS-13

$1.88

Description：MOSFET N-CH 60V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8144b94f7956 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：130.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6555 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：167W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH6002LPS-13

Overview

The DMTH6002LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device utilizes the PowerDI5060-8 surface-mount package, which has a profile under 1.1mm. Key electrical parameters include a maximum static drain-source on-resistance (RDS(ON)) of 2mΩ at VGS = 10V and 30A, and 3mΩ at VGS = 6V. Continuous drain current ratings are 205A at TC = +25°C and 145A at TC = +100°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Manufactured with a thermally efficient PowerDI5060-8 package to minimize thermal resistance.
Undergoes 100% unclamped inductive switching (UIS) testing during production for reliability.
Designed to minimize on-state resistance while maintaining superior switching performance.

Applications

Switching applications
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free if environmental compliance is required for the assembly process. Ensure the design accommodates the specified thermal characteristics for the PowerDI5060-8 case.

Selection Notes

Select this component when a low-profile, high-current N-channel MOSFET is required for power management circuits. The device is appropriate for designs needing high conversion efficiency and robustness against inductive loads due to UIS testing. Consider the thermal resistance values and package dimensions when designing the PCB layout for adequate heat dissipation.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for high-efficiency power management applications. The series emphasizes low on-state resistance and excellent switching capabilities, packaged in the compact PowerDI format to support space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, package type, and thermal characteristics to ensure functional compatibility.