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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：205A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：131 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8289 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 167W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (SWP)
- Package / Case：8-PowerTDFN
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Overview
The DMTH6002LPSWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 205A at a case temperature of +25°C. The device exhibits a low on-resistance of 2mΩ at VGS=10V and 3.3mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 (SWP) surface-mount package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive applications
- Rated for operation up to +175°C junction temperature
- Features wettable flanks to facilitate optical inspection
- Manufactured in IATF 16949 certified facilities
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific suffix 'Q' indicates AEC-Q101 qualification and PPAP capability when sourcing. Confirm the 'W' suffix corresponds to the wettable flank PowerDI5060-8 package variant. Ensure the ordering code matches the required tape and reel packaging quantity specified by the manufacturer.
Selection Notes
Select this component for high-current switching applications requiring robust thermal performance and automotive reliability. Evaluate the low on-resistance characteristics against system efficiency requirements. Consider the wide operating temperature range for environments subject to significant heat generation or extreme ambient conditions.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 form factor with other devices in the family but offers distinct electrical parameters optimized for high-current handling. The Q suffix differentiates it as an automotive-qualified product compared to standard commercial variants.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains AEC-Q101 qualification, identical pinout compatibility, and equivalent or superior thermal and electrical ratings.
