DMTH6004LPS-13

$1.86

Description：MOSFET N-CH 60V 22A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8f508314ea3d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 22A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：96.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4515 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 138W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6004LPS-13

Overview

The DMTH6004LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package and features a maximum drain-source voltage (V_DSS) of 60 V. The device supports a continuous drain current (I_D) of 100 A at a case temperature of 25°C, with a maximum static drain-source on-resistance (R_DS(ON)) of 3.1 mΩ at V_GS = 10 V and 4.5 mΩ at V_GS = 4.5 V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C.
Features low gate charge (Qg) to minimize switching losses during operation.
Includes 100% unclamped inductive switching (UIS) testing in production to ensure robustness.

Applications

Primary switches in isolated DC-DC converters
Synchronous rectifiers
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packing quantity of 2,500 units. Confirm that the component meets RoHS compliance standards and is halogen and antimony-free as defined by the manufacturer's green product specifications. Ensure the application environment does not exceed the absolute maximum ratings provided in the datasheet.

Selection Notes

Select this component when designing circuits requiring high-efficiency power management with low conduction losses. The low R_DS(ON) characteristics make it suitable for applications demanding minimal power dissipation. Consider the thermal resistance values and the requirement for adequate heat sinking or copper plane layout to maintain safe operating temperatures under load.

Part Context

This part belongs to the DMTH6004LPS series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for high-reliability applications, meeting JEDEC standards. An automotive-compliant version of this component is available under a separate datasheet designation.

Replacement Considerations

An automotive-compliant alternative is available under the part number DMTH6004LPSQ. Verify pinout compatibility and electrical parameter alignment before substituting other components in existing designs.

FAQ

Is the DMTH6004LPS-13 qualified for automotive applications?

No, this specific part number is not explicitly stated as automotive-grade. An automotive-compliant version is available separately under the designation DMTH6004LPSQ.