DMTH6004LPSQ-13

$2.10

Description：MOSFET N-CH 60V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4b3cd8f8e588 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.4 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4515 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 138W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6004LPSQ-13

Overview

The DMTH6004LPSQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 3.1mΩ at VGS=10V and 4.5mΩ at VGS=4.5V, with a continuous drain current rating of 100A at TC=+25°C. The device supports an operating junction temperature up to +175°C and includes a total gate charge of 78.3nC at VGS=10V.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation in high ambient temperature environments up to +175°C
Manufactured in IATF16949 certified facilities with PPAP capability

Applications

Primary switches in isolated DC-DC converters
Synchronous rectifiers
Load switches

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental compliance requirements for the intended deployment region. Ensure the selected variant aligns with the necessary automotive qualification standards and manufacturing facility certifications.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Evaluate the low on-resistance characteristics against thermal management constraints. Consider the package limitations regarding continuous drain current ratings under varying thermal conditions.

Part Context

This part belongs to Diodes Incorporated's DMTH series of power MOSFETs designed for demanding power switching applications. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained designs while maintaining efficient thermal dissipation capabilities through the exposed drain pad.