DMTH6004SCT

$0.95

Description：MOSFET N-CH 60V 100A TO220-3
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:3ad4be717fcd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A TO220-3
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.65mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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DMTH6004SCT

Overview

The DMTH6004SCT is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-220AB case with a maximum drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 100 A at TC = +25°C. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 3.65 mΩ at Vgs = 10 V and Id = 100 A. Total gate charge (Qg) is 95.4 nC at Vdd = 30 V, Id = 90 A, and Vgs = 10 V. Thermal resistance from junction to case (Rθjc) is 1.1 °C/W, supporting a total power dissipation of 136 W at TC = +25°C. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
Verified through 100% unclamped inductive switching (UIS) testing during production to ensure robustness.
Designed with low input capacitance and low input/output leakage characteristics.

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix 'SCT' corresponds to the TO-220AB package containing 50 pieces per tube. Confirm that the component meets RoHS directives and is halogen-free. Ensure the application environment supports the specified thermal resistance values and that adequate heatsinking is provided to maintain junction temperatures within the rated limits.

Selection Notes

Select this component when a 60 V N-channel MOSFET capable of handling 100 A continuous current is required. The TO-220AB package provides effective thermal dissipation for high-power applications. Verify that the gate drive voltage can achieve the specified low on-resistance and that the system accounts for the transient thermal impedance under pulsed load conditions.

Part Context

This part belongs to the DMTH6004 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered for high-efficiency power management applications requiring fast switching speeds and low on-resistance. The DMTH6004SCT specifically utilizes the TO-220AB leaded package format.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching voltage ratings, current capabilities, package dimensions, and thermal performance specifications.