DMTH6004SCTBQ-13

$2.55

Description：MOSFET N-CH 60V 100A TO263AB
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7ccc6e3c4a01 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 100A TO263AB
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：4.7W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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DMTH6004SCTBQ-13

Overview

The DMTH6004SCTBQ-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO263AB (D2PAK) case and is qualified to AEC-Q101 standards for automotive applications. Key electrical parameters include a drain-source voltage of 60V, a maximum continuous drain current of 100A at TC=+25°C (package limited), and a static drain-source on-resistance of 3.4mΩ at VGS=10V and ID=100A. The device supports a junction temperature range of -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for high reliability in automotive environments
Rated for operation up to +175°C junction temperature suitable for high ambient conditions
100% tested for unclamped inductive switching to ensure robust end-application performance
Low gate charge minimizes switching losses while low on-resistance reduces power dissipation

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable RoHS directives and halogen-free requirements as defined by the manufacturer. Ensure the procurement channel is authorized to guarantee product authenticity and traceability for automotive-grade components.

Selection Notes

Select this component when designing circuits requiring high thermal stability and automotive qualification. The TO263AB package provides effective heat dissipation capabilities. Consider the 60V rating and 100A current capacity against system load requirements. Verify compatibility with standard PCB pad layouts for D2PAK packages during the schematic capture phase.

Part Context

This part belongs to the DMTH6004 series of N-channel MOSFETs designed specifically for demanding automotive electronic systems. The series emphasizes durability under harsh operating conditions, including high temperatures and electrical stress. It represents a specialized segment of power semiconductors intended for critical vehicle subsystems where reliability is paramount.

Replacement Considerations

Direct substitutes must match the 60V rating, TO263AB package, and AEC-Q101 qualification. Verify pinout compatibility and thermal resistance characteristics before integration.