DMTH6004SPSWQ-13

$1.17

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3645d702acc7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：95.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4556 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH6004SPSWQ-13

Overview

The DMTH6004SPSWQ-13 is a 60V N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 3.1mΩ at VGS=10V and ID=50A, with a continuous drain current rating of 100A at TC=+25°C. The device supports an operating temperature range from -55°C to +175°C and includes a total gate charge of 95.4nC.

Feature Summary

Qualified to AEC-Q101 standards for automotive applications
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production

Applications

DC motor controls
Synchronous rectification
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable RoHS directives and halogen-free requirements for your project specifications. Ensure the selected part number aligns with the intended manufacturing facility's IATF 16949 certification status.

Selection Notes

Select this component when high thermal stability and robustness against inductive loads are required. The low on-resistance minimizes conduction losses, while the low gate charge reduces switching energy. Verify that the package thermal resistance and ambient conditions support the required power dissipation levels.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes a specialized PowerDI package designed for efficient heat dissipation and reliable surface-mount assembly. The device is manufactured in facilities certified under IATF 16949 standards.

Replacement Considerations

Consult official substitution lists for verified alternatives. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions to preserve board compatibility and electrical performance.