DMTH6005LK3Q-13

$1.39

Description：MOSFET N-CH 60V 90A TO252-2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:60a8d15c44e5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 90A TO252-2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2962 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6005LK3Q-13

Overview

The DMTH6005LK3Q-13 is a 60V N-channel enhancement mode MOSFET in a TO252 package, rated for junction temperatures up to +175°C. It features a maximum on-resistance of 5.6mΩ at VGS=10V and ID=50A, with a continuous drain current of 90A at TC=+25°C. The device supports 100% unclamped inductive switching and has a total gate charge of 47.1nC at VGS=10V. It is AEC-Q101 qualified and PPAP capable.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Ensures reliable end applications through 100% unclamped inductive switching capability
Minimizes power losses via low static drain-source on-resistance
Reduces switching losses due to low total gate charge

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix -13 corresponds to the tape and reel packing quantity of 2,500 units as documented. Confirm that the component meets the required automotive quality standards, specifically AEC-Q101 qualification and PPAP capability, if intended for such regulated supply chains. Ensure the TO252 package dimensions align with the target PCB layout constraints.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The +175°C rating provides significant thermal headroom compared to standard industrial parts. Consider the low RDS(ON) for efficiency-critical power paths and verify that the gate drive voltage supports the specified on-resistance thresholds for optimal conduction performance.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, manufactured in IATF 16949 certified facilities. It is designed to meet stringent automotive reliability requirements, including specific change control protocols. The device utilizes a green molding compound and is lead-free, halogen-free, and antimony-free, adhering to environmental directives.