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Product Detailed Parameters
- Description：MOSFET N-CH 60V 17.2A/100A PWRDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17.2A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2162 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.88W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMTH6006LPSWQ is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) of ±20V. The device supports a continuous drain current (ID) of 100A at TC = +25°C with a typical on-resistance (RDS(ON)) of 6.5mΩ at VGS = 10V. It operates within a temperature range of -55°C to +175°C, includes wettable flank terminals, and is AEC-Q101 qualified.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features wettable flank terminals for improved optical inspection
- Qualified to AEC-Q101 standards with PPAP capability
- Manufactured in IATF 16949 certified facilities
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific package variant required, as the datasheet lists both Type Q and Type UX configurations under the same part number. Confirm that the intended application meets the AEC-Q101 qualification requirements and that the manufacturing facility adheres to IATF 16949 standards. Ensure thermal management designs account for the specified thermal resistance values to maintain safe operating temperatures.
Selection Notes
Select this component when high current handling and robust switching performance are required in automotive environments. The low on-resistance minimizes conduction losses, while the fast switching speed reduces dynamic losses. Consider the PowerDI5060-8 package size for board space constraints and verify that the gate drive voltage aligns with the optimal RDS(ON) characteristics provided in the electrical specifications.
Part Context
This device belongs to Diodes Incorporated's automotive-grade MOSFET portfolio, specifically engineered for high-reliability applications. It utilizes silicon technology housed in a lead-free, halogen-free PowerDI package. The product line emphasizes compliance with strict automotive quality standards, ensuring consistent performance across varying ambient temperatures and operational stresses.
Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Ensure any replacement matches the 60V rating, N-channel configuration, and PowerDI5060-8 footprint. Verify that alternative components also meet AEC-Q101 qualifications if automotive reliability is required.
