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Product Detailed Parameters
- Description：MOSFET N-CH 60V PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：17.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：27.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1721 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.94W (Ta), 107W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6006SPS-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 100A at TC = +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 4.8mΩ with a maximum of 6.2mΩ at VGS = 10V. Operating characteristics include a gate threshold voltage ranging from 2V to 4V, total gate charge of 27.9nC, and an operating temperature range from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
- Manufactured with 100% unclamped inductive switching (UIS) testing to ensure robustness.
- Designed to minimize on-state resistance while maintaining fast switching speeds and low input capacitance.
Applications
- Synchronous rectifiers
- DC-DC converters
- Power management
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the PowerDI5060-8/SWP variant matches your PCB footprint requirements. Ensure compliance with RoHS directives and halogen-free specifications if mandated by your design standards before finalizing procurement.
Selection Notes
Select this component when a 60V N-channel MOSFET with low RDS(ON) and high thermal tolerance is required. The 100A rating at case temperature supports high-current applications. Verify that the 6.2mΩ maximum RDS(ON) meets your conduction loss targets. Consider the 27.9nC gate charge for driver capability assessment in high-frequency switching designs.
Part Context
This part belongs to the DMTH6006 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 leadless package designed for efficient heat dissipation through the exposed drain pad. The series is engineered for high-efficiency power management solutions requiring superior switching performance alongside low on-state losses.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified cross-reference part numbers. Do not substitute based solely on matching electrical parameters without confirming pinout compatibility and package dimensions.
FAQ
What is the maximum pulsed drain current for the DMTH6006SPS-13?
The maximum pulsed drain current (IDM) is 400A, specified under conditions of a 10µs pulse duration and a 1% duty cycle.
Is the DMTH6006SPS-13 qualified for automotive applications?
Standard production does not automatically imply AEC-Q100 qualification. For automotive applications requiring specific change control or AEC-Q100/101/104/200 qualification, contact Diodes Incorporated directly.
