DMTH6009LPSQ-13

$0.31

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e62abd82e5a1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：11.76A (Ta), 89.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6009LPSQ-13

Overview

The DMTH6009LPSQ is a single N-channel enhancement mode MOSFET rated for 60V drain-source voltage and operating up to +175°C junction temperature. It features a maximum on-resistance of 10mΩ at VGS=10V and 12mΩ at VGS=4.5V, supporting continuous drain currents of 89.5A at TC=+25°C and 11.76A at TA=+25°C. Packaged in PowerDI5060-8, it includes an internal body diode with a forward voltage of 1.2V max at 20A.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured in IATF 16949 certified facilities with specific change control requirements.
Verified through 100% unclamped inductive switching (UIS) testing in production.

Applications

High-frequency switching circuits
Synchronous rectification systems
DC-DC converters

Procurement Notes

Verify the complete part number including the -13 suffix for tape and reel packaging configuration. Confirm that the application environment meets the specified thermal limits and that the design accounts for the device's power dissipation characteristics under actual load conditions.

Selection Notes

Select this component when automotive reliability and high-temperature resilience are required. The low gate charge minimizes switching losses, while the robust UIS rating ensures durability against inductive loads. Ensure the PCB layout supports the exposed drain pad for optimal thermal performance.

Part Context

This device belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes the PowerDI5060-8 package to provide a compact footprint with enhanced thermal management capabilities compared to standard surface-mount packages.

Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the circuit board.

FAQ

Is the DMTH6009LPSQ suitable for harsh automotive environments?

Yes, it is qualified to AEC-Q101 standards and manufactured in IATF 16949 certified facilities, making it ideal for demanding automotive applications.