DMTH6010LK3-13

$1.50

Description：MOSFET N-CH 60V 14.8A/70A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ca34d124d254 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 14.8A/70A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6010LK3-13

Overview

The DMTH6010LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a junction temperature range of -55°C to +175°C. The device provides a continuous drain current (ID) of 70A at TC = +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 8mΩ at VGS = 10V and 12mΩ at VGS = 4.5V. Packaged in a TO-252 case, it is supplied in tape and reel quantities of 2,500 units.

Feature Summary

Advanced technology designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Qualified to AEC-Q101 standards for high reliability applications.
Small form factor thermally efficient package enables higher density end products.
Lead-free finish; RoHS compliant and halogen and antimony free.

Applications

Power Management Functions
DC-DC Converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration as defined in the official datasheet. Confirm that the component meets the required environmental specifications, including compliance with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2). Ensure the application environment supports the specified operating temperature range up to +175°C.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) is required for DC-DC converters or backlighting circuits. The TO-252 package offers a balance between thermal dissipation and board space efficiency. Consider the gate threshold voltage characteristics and total gate charge values to ensure compatibility with the intended driver circuitry for optimal switching performance.

Part Context

This part belongs to the DMTH6010LK3 series from Diodes Incorporated, representing a new generation of MOSFETs optimized for minimizing on-state losses. The product line targets high-efficiency power management applications requiring robust performance in compact designs. The manufacturer utilizes advanced silicon technology to achieve the specified electrical parameters within the standard TO-252 surface-mount package.

Replacement Considerations

For automotive-specific requirements, consider the DMTH6010LK3Q variant which is explicitly noted as an automotive-compliant part available under a separate datasheet. Verify pinout compatibility and thermal resistance characteristics if substituting with other 60V N-channel MOSFETs in the TO-252 package.