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Product Detailed Parameters
- Description：MOSFET N-CH 60V 14.8A/70A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14.8A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：31W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH6010LK3Q-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers low on-resistance of 8mΩ at VGS=10V and 12mΩ at VGS=4.5V. Continuous drain current reaches 70A at TC=+25°C. Packaged in TO252 (DPAK), it supports high-power switching with robust UIS capability.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- Rated for operation up to +175°C junction temperature
- 100% Unclamped Inductive Switching (UIS) tested in production
- Low input capacitance and low on-resistance for efficient switching
Applications
- Engine management systems
- Body control electronics
- DC/DC converters
Procurement Notes
Verify the complete part number including the -13 suffix for tape and reel packaging quantity. Confirm AEC-Q101 qualification and IATF 16949 manufacturing compliance if specific automotive change control requirements apply. Ensure thermal design accounts for the specified power dissipation limits under intended operating conditions.
Selection Notes
Select this component when high ambient temperature tolerance and automotive reliability are required. The TO252 package provides a balance between current handling and board space. Verify gate drive voltage compatibility with the specified RDS(ON) thresholds at 10V and 4.5V for optimal efficiency in the target circuit design.
Part Context
This part belongs to the DMTH6010 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic TO252 package with matte tin annealed terminal finish. The device is lead-free, halogen-free, and antimony-free, complying with RoHS directives.
Replacement Considerations
Consult official cross-reference lists or manufacturer substitution guides for verified equivalents. Do not assume pin-compatible replacements without verifying electrical parameters and package dimensions against the original datasheet specifications.
