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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 13.1A PWRDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：13.1A (Ta), 47.6A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2615pF @ 30V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：PowerDI5060-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6010LPDQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage (V_DSS) of 60V and operates up to a junction temperature of +175°C. The device offers a maximum on-resistance (R_DS(ON)) of 11mΩ at V_GS = 10V and 16mΩ at V_GS = 4.5V, with continuous drain currents reaching 47.6A at case temperatures of +25°C. Packaged in a PowerDI®5060-8 surface-mount format, it includes integrated body diodes and meets AEC-Q101 standards.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive use
- Rated for operation in high ambient temperature environments up to +175°C
- 100% Unclamped Inductive Switching (UIS) tested in production
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Engine management systems
- Body control electronics
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component is manufactured in IATF 16949 certified facilities to ensure compliance with automotive change control requirements. Validate the date code marking 'H6010LD' against current production batches.
Selection Notes
Select this component when designing circuits requiring dual N-channel MOSFETs in a compact PowerDI5060-8 footprint. Ensure the application demands an operating temperature range extending to +175°C and requires AEC-Q101 qualification. Verify that the 60V breakdown voltage and 11mΩ on-resistance specifications align with the system's power management and thermal dissipation constraints.
Part Context
This part belongs to the DMTH6010 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical characteristics with variants such as the DMTH6010LPD-13 but carries the 'Q' designation indicating AEC-Q101 qualification and PPAP capability. The series is engineered specifically for robust performance in demanding automotive electronic environments.
Replacement Considerations
Direct substitutes within the same package and specification include the DMTH6010LPD-13. When replacing, verify that the alternative part maintains the required AEC-Q101 qualification status if the application mandates automotive-grade reliability. Ensure the replacement supports the necessary thermal resistance and gate charge parameters for the existing driver circuitry.
