DMTH6010LPDW-13

$0.56

Description：MOSFET 2N-CH 60V 13.1A PWRDI50
Series：-

SKU:70b6e7fbd978 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 13.1A PWRDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：13.1A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs：11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2615pF @ 30V
Power - Max：2.8W (Ta), 37.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：PowerDI5060-8 (Type UXD)
Grade：-
Qualification：-

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DMTH6010LPDW-13

Overview

The DMTH6010LPDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8/SWP package. It features a drain-source voltage (V_DSS) of 60V and a maximum continuous drain current (I_D) of 47.6A at TC = +25°C. The device offers a low on-state resistance (R_DS(on)) of 11mΩ at V_GS = 10V and 16mΩ at V_GS = 4.5V. Total gate charge (Q_g) is 40.2nC at V_GS = 10V. Operating temperature ranges from -55°C to +175°C.

Feature Summary

Dual N-channel configuration for high-efficiency power management
Wettable flank design for improved optical inspection reliability
Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier format as documented. Confirm that the component meets RoHS 3 and halogen-free requirements if environmental compliance is mandatory for the target assembly process.

Selection Notes

Select this part when a compact dual N-channel solution is required for automotive or industrial environments with high ambient temperatures. Ensure the PCB layout accommodates the exposed drain pad thermal characteristics and the specific PowerDI5060-8/SWP footprint dimensions.

Part Context

This component belongs to the DMTH6010 series of dual MOSFETs designed by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP (Type UXD) surface-mount package, which provides enhanced thermal performance and solderability compared to standard flat packages.

Replacement Considerations

Diodes Incorporated lists the DMTH6010LPDWQ as an automotive-compliant alternative under a separate datasheet. Verify pinout compatibility and thermal resistance specifications before substituting with other manufacturers' dual N-channel MOSFETs in the 60V/11mΩ class.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.