DMTH6010LPS-13

$1.20

Description：MOSFET N-CH 60V 13.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7f016f5a943a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 13.5A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：13.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2090 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH6010LPS-13

Overview

The DMTH6010LPS-13 is a surface-mount N-channel enhancement mode MOSFET in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 100 A at case temperature of +25°C, or 13.5 A at ambient temperature of +25°C. The maximum on-resistance (R_DS(ON)) is 8 mΩ at V_GS = 10 V and 12 mΩ at V_GS = 4.5 V. Total gate charge (Q_g) is 41.3 nC at V_GS = 10 V. Thermal resistance from junction to case (R_θJC) is 1.1 °C/W, with total power dissipation rated at 136 W at TC = +25°C.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient temperature environments.
Manufactured using a new generation process designed to minimize on-state losses while maintaining superior switching performance.
Subjected to 100% unclamped inductive switching (UIS) testing during production to ensure robustness and reliability.

Applications

Notebook battery power management systems
DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration when sourcing components. Confirm that the required package variant matches the standard PowerDI5060-8 or the SWP (Type UX) option, as both are available under this part number prefix. Ensure procurement channels provide documentation confirming compliance with RoHS directives and Halogen/Antimony-free 'Green' device standards.

Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds within a compact surface-mount footprint. Evaluate thermal management requirements based on the specified R_θJA and R_θJC values, particularly if operating near the maximum junction temperature limit. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic-level drive voltages.

Part Context

This device belongs to Diodes Incorporated's DMTH series of N-channel MOSFETs, specifically utilizing the PowerDI®5060-8 package technology. The series focuses on balancing low on-resistance with efficient switching capabilities for portable and industrial power management solutions.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMTH6010LPSQ. Verify package pinout compatibility and electrical parameter tolerances before substituting with other 60V N-channel MOSFETs in the PowerDI5060-8 form factor.

FAQ

Is the DMTH6010LPS qualified for automotive applications?

The standard DMTH6010LPS is not explicitly designated for automotive use; however, an automotive-compliant variant, DMTH6010LPSQ, is available under a separate datasheet.