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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A TO220-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：36.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1940 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The DMTH6010SCT is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum on-resistance of 7.2mΩ at VGS=10V. The device supports a continuous drain current of 100A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a TO-220-3 case, it offers a total power dissipation of 125W when mounted on an infinite heat sink.
Feature Summary
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching tested for reliability
- Low input capacitance and low leakage currents
Applications
- Power Supplies
- Motor Control
- DC-DC Converters
Procurement Notes
Verify the specific datasheet revision (DS38216 Rev. 2 - 2) matches your design requirements. Confirm that the TO-220-3 through-hole package aligns with your PCB layout constraints. Ensure thermal management strategies account for the specified thermal resistance values under your actual operating conditions.
Selection Notes
Select this component for high-efficiency power management applications requiring robust switching performance. Consider the 100A current capability and low on-resistance for minimizing conduction losses. Evaluate the thermal characteristics against your system's ambient temperature and heat sinking capabilities to ensure reliable operation within the specified limits.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TO-220-3 plastic package. The device is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical for overall system efficiency.
Replacement Considerations
Check equivalent circuit pinouts and electrical parameters before substitution. Verify that any alternative device meets or exceeds the 60V breakdown voltage and 100A current ratings. Ensure the replacement package is compatible with your existing mounting infrastructure.
