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Product Detailed Parameters
- Description：MOSFET N-CH 60V 16.3A/70A TO252
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：16.3A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2841 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMTH6010SK3Q-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 70A at TC = +25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 8mΩ at VGS = 10V and ID = 20A. It operates within a junction temperature range of -55°C to +175°C, with a total power dissipation of 59W at TC = +25°C.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- 100% Unclamped Inductive Switching (UIS) tested in production for robustness
- Small form factor thermally efficient package enables higher density end products
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the complete part number includes the suffix '-13' to confirm the specific tape and reel packaging quantity of 2,500 units. Ensure the design environment supports the TO252 (DPAK) package dimensions and thermal requirements specified in the datasheet. Confirm compliance with AEC-Q101 qualification and PPAP capabilities if required for automotive supply chains.
Selection Notes
Select this component when an N-channel MOSFET with a 60V rating and low on-resistance is needed for automotive-grade applications. The device is suitable for designs requiring high reliability under high ambient temperatures. Consider the TO252 package size and thermal resistance characteristics during PCB layout planning to ensure adequate heat dissipation for the intended power levels.
Part Context
This part belongs to the DMTH6010 series from Diodes Incorporated, designed specifically for automotive applications. It is qualified to AEC-Q101 standards and supported by PPAP documentation. The product is manufactured in IATF 16949 certified facilities, ensuring consistent quality for demanding automotive electronics markets.
Replacement Considerations
Consult official manufacturer substitution lists or equivalent circuit parameters for verified alternatives. Do not assume pin compatibility or electrical equivalence with other 60V N-channel MOSFETs without reviewing their respective datasheets.
