ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs：20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：825pF @ 30V
- Power - Max：1.46W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The DMTH6015LDVWQ-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI3333-8 package. It features a drain-source voltage (BVDSS) of 60V and a maximum on-resistance (RDS(ON)) of 20.5mΩ at VGS=10V and 27mΩ at VGS=4.5V. The device supports a continuous drain current of 24.5A at TC=+25°C and operates within a junction temperature range of -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 1.3V to 2.5V, total gate charge of 7.1nC at VGS=4.5V, and input capacitance of 825pF.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive applications
- Rated for operation up to +175°C junction temperature
- Features wettable flanks for improved optical inspection reliability
- Includes integrated ESD protection diodes on both gates
Applications
- Wireless charging systems
- DC-DC converters
- Automotive power management circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets the required IATF 16949 manufacturing facility standards if strict automotive change control protocols are mandated for the target application.
Selection Notes
Select this component when a dual N-channel configuration is required in a compact POWERDI3333-8 footprint. Ensure the design accommodates the ±16V maximum gate-source voltage limit. Evaluate thermal performance against the specified RθJA values based on the intended PCB copper area and mounting conditions.
Part Context
This part belongs to the DMTH6015 series of dual N-channel MOSFETs designed for high-reliability environments. It shares the same core electrical specifications as the DMTH6015LDVWQ but differs in packaging quantity. The series emphasizes low on-resistance and robust UIS testing for demanding power switching duties.
Replacement Considerations
Direct substitutes must match the dual N-channel topology, 60V rating, and POWERDI3333-8/SWP package. Verify pinout compatibility, specifically the separate gate terminals (G1, G2) and shared drain/source connections. Cross-reference thermal resistance and RDS(ON) curves to ensure equivalent performance under load.
