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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 9.2A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：9.2A (Ta), 24.5A (Tc)
- Rds On (Max) @ Id, Vgs：20.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：825pF @ 30V
- Power - Max：1.46W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3333-8 (Type UXD)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMTH6015LDVWQ is a dual N-channel enhancement mode MOSFET rated for 60V drain-source voltage and operating up to +175°C. It features a maximum on-resistance of 20.5mΩ at VGS=10V and 27mΩ at VGS=4.5V, supporting continuous currents of 24.5A at TC=+25°C. Packaged in a POWERDI3333-8/SWP (Type UXD) case with wettable flanks, it includes an integrated gate protection diode. The device is AEC-Q101 qualified and PPAP capable.
Feature Summary
- Rated to +175°C for high ambient temperature environments
- 100% Unclamped Inductive Switching (UIS) tested in production
- Low RDS(ON) minimizes on-state losses
- ESD protected gate with integrated protection diode
Applications
- Wireless Charging
- DC-DC Converters
- Power Management
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation before procurement. The -7 suffix indicates a 2,000-unit tape and reel packaging format, while the -13 suffix denotes a 3,000-unit configuration. Confirm that the required package variant matches the design specifications to ensure correct component integration.
Selection Notes
Select this component for automotive applications requiring AEC-Q101 qualification and PPAP support. Ensure the PCB layout accommodates the POWERDI3333-8/SWP dimensions and utilizes thermal biasing to maximize current handling capabilities. Verify that the system's gate drive voltage aligns with the specified thresholds for optimal switching performance.
Part Context
This part belongs to the DMTH6015 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It shares the same electrical characteristics as the DMTH6015LDVWQ-13 but differs in the standard reel quantity provided by the manufacturer.
Replacement Considerations
The DMTH6015LDVWQ-13 is a direct functional equivalent with identical electrical parameters and pinout, differing only in the factory reel quantity. No other cross-compatible substitutes are officially documented.
