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Product Detailed Parameters
- Description：MOSFET N-CH 60V 9.4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.06W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (SWP) (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH6016LFDFW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum on-resistance of 18mΩ at VGS=10V, or 27.5mΩ at VGS=4.5V. The device supports a continuous drain current of 9.4A at TA=25°C and operates within a junction temperature range of -55°C to +175°C. Packaged in a U-DFN2020-6/SWP (Type F) footprint with a 0.6mm profile, it is supplied in reels of 10,000 units.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Qualified to AEC-Q101 standards for automotive reliability
- 100% unclamped inductive switching tested for robustness
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Power-management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration as defined in the manufacturer's datasheet. Confirm that the U-DFN2020-6 package dimensions and pad layout requirements align with your PCB design constraints before finalizing procurement orders.
Selection Notes
Select this component when a low-profile 60V N-channel MOSFET is required for space-constrained designs. Ensure the application gate drive voltage meets the minimum threshold for optimal RDS(ON) performance. Verify thermal management capabilities against the specified thermal resistance values for your specific copper board area.
Part Context
This part belongs to Diodes Incorporated's DMTH series of power MOSFETs designed for high-efficiency applications. It utilizes silicon technology and is housed in a molded plastic 'Green' compound package. The product is distinct from its automotive-compliant counterpart, the DMTH6016LFDFWQ, which is documented under a separate datasheet.
Replacement Considerations
The DMTH6016LFDFWQ is an automotive-compliant alternative available under a separate datasheet. Other parts in the DMTH series may offer different voltage ratings or current capacities but require individual datasheet verification for pinout and electrical compatibility.
