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Product Detailed Parameters
- Description：MOSFET N-CH 60V 9.4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.06W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (SWP) (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH6016LFDFW-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, rated for a drain-source voltage of 60V and operating up to +175°C. It utilizes a U-DFN2020-6/SWP (Type F) package with a 0.6mm profile. The device achieves a maximum on-resistance of 18mΩ at VGS=10V and 27.5mΩ at VGS=4.5V. Continuous drain current reaches 9.4A at TA=25°C. It is qualified to AEC-Q101 standards.
Feature Summary
- Rated for high ambient temperature environments with operation up to +175°C
- Features 100% unclamped inductive switching testing for robust end applications
- Designed with low RDS(ON) to minimize on-state losses
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packing configuration as documented in the official datasheet. Confirm that the U-DFN2020-6/SWP (Type F) package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing standards.
Selection Notes
Select this component when a compact 0.6mm profile and a small 4mm² PCB footprint are necessary. It is suitable for designs requiring high thermal stability up to +175°C and low conduction losses. Verify that the 60V breakdown voltage and 9.4A continuous current ratings meet the specific load requirements of your power management circuit.
Part Context
This part belongs to the DMTH6016 series of N-channel MOSFETs manufactured by Diodes Incorporated. It represents a newer generation designed to balance low on-state resistance with superior switching performance. The product line includes variants such as the LFVWQ-13 and LPD, offering different packaging options like PowerDI3333-8 or PowerDI5060-8.
Replacement Considerations
The automotive-compliant variant DMTH6016LFDFWQ is available under a separate datasheet. Other series members include DMTH6016LPD and DMTH6016LFVWQ-13, which utilize different packages such as PowerDI5060-8 or PowerDI3333-8.
