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Product Detailed Parameters
- Description：MOSFET N-CH 60V 9.4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.06W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (SWP) (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH6016LFDFWQ-13 is an automotive-grade, single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI3333-8 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 41 A at case temperature. Its maximum on-resistance is specified at 16 mΩ. The component supports gate-source voltages up to ±20 V with a typical threshold voltage of 1 V. It exhibits low gate charge of 15.1 nC and fast switching characteristics, including rise and fall times of 6.3 ns and 5.9 ns respectively. It operates within a temperature range of -55°C to +175°C and holds AEC-Q101 qualification.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- High thermal performance supporting operation up to +175°C junction temperature
- Low on-resistance optimized for efficient power management
- Fast switching speeds with minimal gate charge
Applications
- DC-DC converters
- LED backlight systems
- Advanced Driver Assistance Systems (ADAS)
- Under-the-hood automotive applications
Procurement Notes
Verify the specific suffix LFDFWQ-13 against official Diodes Incorporated documentation to confirm the exact tape-and-reel quantity and packaging configuration. Ensure that the AEC-Q101 qualification status aligns with your project's automotive grade requirements. Cross-reference the PowerDI3333-8 footprint dimensions with your PCB layout guidelines prior to procurement.
Selection Notes
Select this component when a compact, high-current single N-channel solution is required for automotive environments. The 60V rating and 16mΩ resistance offer a balance between conduction loss and voltage handling. Consider the PowerDI3333-8 package size constraints and the +175°C operating limit compared to standard industrial grades. Evaluate the 41A current capability against your specific thermal dissipation design.
Part Context
This part belongs to the DMTH series of ultra-low RDS(on) MOSFETs designed specifically for automotive applications. The series emphasizes high power density within small footprints like the DFN2020 or PowerDI variants. These devices are engineered to replace larger packages such as SOT223, allowing for significant PCB area reduction while maintaining robust electrical performance under harsh engine bay conditions.
Replacement Considerations
Consult official substitution guides for equivalent parts within the DMTH6016 family or other 60V single N-channel MOSFETs with similar RDS(on) and package compatibility.
