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The DMTH6016LFDFWQ-7R is a 60V N-channel enhancement mode MOSFET in a U-DFN2020-6/SWP (Type F) package. It features a maximum on-resistance of 18mΩ at VGS=10V and 27.5mΩ at VGS=4.5V, with continuous drain currents of 9.4A at TA=25°C and 6.6A at TA=100°C. The device supports an operating temperature range from -55°C to +175°C and includes sidewall plating for optical inspection.
Verify the specific ordering suffix '-7R' against official Diodes Incorporated documentation to confirm the required taping orientation before procurement. Confirm that the U-DFN2020-6/SWP (Type F) package dimensions align with the target PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by the end application.
Select this component when a compact 4mm² footprint is required alongside automotive reliability standards. Evaluate thermal resistance values based on whether the design utilizes a minimum recommended pad layout or a larger copper plate. Verify gate threshold voltage characteristics match the driving circuit capabilities for optimal switching performance.
This part belongs to the DMTH6016LFDFWQ series manufactured by Diodes Incorporated. It is designed specifically for automotive applications requiring stringent quality controls. The device is produced in IATF 16949 certified facilities and is supported by a Product Part Approval Process (PPAP).
Consult the manufacturer's datasheet for verified substitute part numbers within the same series. Cross-reference pinouts and electrical parameters carefully when considering alternatives.