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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.17W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH6016LFVWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 60 V and a maximum continuous drain current (ID) of 41 A at TC = +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 16 mΩ at VGS = 10V and 27 mΩ at VGS = 4.5V. Qualified to AEC-Q101 standards, it supports an operating temperature range from -55°C to +175°C.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Manufactured with wettable flank terminals to facilitate improved optical inspection
- Subjected to 100% unclamped inductive switching (UIS) testing during production
Applications
- Automotive backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the 'A' suffix in the requested model name is supported by the manufacturer's official documentation or if it represents a non-standard designation. Ensure compliance with automotive PPAP requirements if applicable to the end application.
Selection Notes
Select this component when a compact surface-mount solution is required for 60V applications demanding low conduction losses. The PowerDI3333-8 package provides thermal efficiency for space-constrained designs. Verify gate drive compatibility with the specified RDS(ON) thresholds at both 4.5V and 10V logic levels.
Part Context
This part belongs to the DMTH6016LFVWQ series of automotive-grade MOSFETs. It utilizes a molded plastic green molding compound and matte tin annealed terminals over a copper leadframe. The device is fully RoHS compliant and halogen-free, manufactured in IATF 16949 certified facilities.
Replacement Considerations
Consult the manufacturer's datasheet for equivalent circuit topologies and pin-compatible alternatives within the same series. Direct substitutes must match the 60V rating, PowerDI3333-8 package dimensions, and AEC-Q101 qualification status.
