DMTH6016LFVWQ-13

$0.82

Description：MOSFET N-CH 60V 41A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ea6192e054d2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 41A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.17W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMTH6016LFVWQ-13

Overview

The DMTH6016LFVWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (BVDSS) of 60V and a maximum on-resistance (RDS(ON)) of 16mΩ at VGS=10V. The device supports a continuous drain current of 41A at TC=25°C and operates within a temperature range of -55°C to +175°C. It is AEC-Q101 qualified for automotive use.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Small form factor thermally efficient package enables higher density end products
Wettable flank design for improved optical inspection

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if your application demands automotive-grade change control protocols. Ensure compatibility with IATF 16949 certified manufacturing facilities.

Selection Notes

Select this component when high ambient temperature tolerance is required, given its +175°C rating. Consider the PowerDI3333-8 package for applications needing a small footprint with thermal efficiency. Verify that the 60V breakdown voltage and 16mΩ on-resistance meet the circuit's electrical requirements. Check if wettable flank visibility is necessary for automated optical inspection processes.

Part Context

This part belongs to the DMTH6016 series of N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI3333-8/SWP format. The series is specifically engineered to address the stringent reliability and environmental requirements found in modern automotive electronic systems.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent or substitute part numbers. Do not assume cross-compatibility based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.