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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.17W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH6016LFVWQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and operates within a temperature range of -55°C to +175°C. The device provides a maximum on-resistance of 16mΩ at VGS=10V and 27mΩ at VGS=4.5V, supporting continuous drain currents up to 41A at TC=+25°C. Packaged in a PowerDI3333-8/SWP (Type UX) footprint, it includes wettable flanks for inspection and meets AEC-Q101 automotive qualification standards.
Feature Summary
- Rated for high ambient temperature environments with operation up to +175°C
- Manufactured in IATF 16949 certified facilities with PPAP capability for automotive applications
- Features wettable flanks to enable improved optical inspection of solder joints
- Undergoes 100% unclamped inductive switching (UIS) testing during production
Applications
- Automotive backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all required automotive quality standards, including AEC-Q101 qualification and PPAP support, before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature automotive environments. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance. Verify thermal management strategies account for the package's thermal resistance characteristics under expected load conditions.
Part Context
This part belongs to the DMTH6016 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8/SWP package, which offers a small form factor suitable for high-density designs. The series is engineered to balance low conduction losses with efficient switching capabilities for power management tasks.
Replacement Considerations
Consult the manufacturer's datasheet for equivalent part numbers within the same product family. Verify pinout compatibility and electrical parameter alignment before substituting.
