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Product Detailed Parameters
- Description：MOSFET N-CH 60V 41A POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：939 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.17W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH6016LFVWQ-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a 60V drain-source voltage rating and operates up to +175°C junction temperature. The device offers a maximum on-resistance of 16mΩ at VGS=10V and 27mΩ at VGS=4.5V, supporting continuous drain currents of 41A and 31.6A respectively at +25°C case temperature. Packaged in a thermally efficient PowerDI3333-8/SWP format with wettable flanks, it meets AEC-Q101 standards and undergoes 100% UIS testing.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Manufactured in IATF 16949 certified facilities with PPAP capability for automotive change control
- Features wettable flanks to facilitate improved optical inspection during assembly
Applications
- Automotive backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The -7 suffix indicates a 2,000-unit tape and reel carrier, while other suffixes may denote different quantities or packaging types. Confirm that the required package variant matches the exact part number specifications to ensure compatibility with automated placement equipment and thermal management requirements.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The small form factor enables higher density designs compared to larger packages. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance characteristics. Verify PCB layout guidelines for the PowerDI3333-8 package to maximize thermal dissipation capabilities.
Part Context
This part belongs to the DMTH6016 series of N-channel MOSFETs manufactured by Diodes Incorporated. The series is engineered specifically to meet stringent automotive reliability standards. The DMTH6016LFVWQ-7 variant utilizes the PowerDI3333-8/SWP package, which provides enhanced thermal efficiency and mechanical stability suitable for demanding electronic applications.
Replacement Considerations
Direct replacements must match the 60V rating, 16mΩ max RDS(ON) at VGS=10V, and PowerDI3333-8/SWP package dimensions. Verify that any substitute component also holds AEC-Q101 qualification and supports the +175°C operating temperature range to maintain system reliability.
