DMTH6016LK3-13

$0.49

Description：MOSFET N-CH 60V 10.8 TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bec52e0cf41c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10.8 TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta), 46.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6016LK3-13

Overview

The DMTH6016LK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO252 (DPAK) surface-mount package and operates with a drain-source voltage of 60V. The device supports continuous drain currents up to 46.9A at case temperatures of +25°C, with an on-state resistance of 17mΩ at VGS=10V. It is rated for junction temperatures up to +175°C and includes internal body diode characteristics.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching testing for robustness
Designed to minimize on-state losses through low RDS(ON)
Qualified to AEC-Q101 standards for automotive reliability

Applications

Power management functions
DC-DC converters
Backlighting circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the standard DMTH6016LK3 part number matches the required TO252 case style. Ensure compliance with RoHS directives and halogen-free requirements if applicable to the target assembly process.

Selection Notes

Select this component when designing power management systems requiring high efficiency and superior switching performance. The low gate-drain charge product optimizes switching losses. Consider the thermal resistance values for heat sink design to maintain junction temperatures within the specified operating range during continuous conduction.

Part Context

This component belongs to the DMTH6016 series of N-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology housed in a molded plastic DPAK case. The series is engineered to balance low static resistance with dynamic switching capabilities for modern electronic power control applications.