DMTH6016LK3Q-13

$0.26

Description：MOSFET N-CH 60V 10.8 TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:920c3576a0e1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 10.8 TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：10.8A (Ta), 46.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH6016LK3Q-13

Overview

The DMTH6016LK3Q is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 46.9A at TC = +25°C. The device offers a low on-resistance of 17mΩ at VGS = 10V and 24mΩ at VGS = 4.5V. It operates within a temperature range of -55°C to +175°C, with total power dissipation rated at 60W when mounted on an infinite heatsink.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Features 100% unclamped inductive switching capability for robust end applications
Low RDS(ON) minimizes on-state losses
Excellent Qgd x RDS(ON) figure of merit

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 2,500 units. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if your application demands automotive-grade change control protocols. Ensure compatibility with IATF 16949 certified manufacturing facilities.

Selection Notes

Select this component for designs requiring high thermal stability and robust switching performance in automotive contexts. Consider the TO252 (DPAK) package constraints for thermal management. Evaluate the gate threshold voltage characteristics against your driver capabilities, particularly for lower voltage drive scenarios such as 4.5V operation.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities and supports specific automotive change control requirements. The device utilizes a molded plastic 'Green' molding compound that is halogen and antimony free.

Replacement Considerations

Consult official substitution lists for equivalent parts within the same voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before replacing existing components in established designs.