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Product Detailed Parameters
- Description：MOSFET N-CHA 60V 10.6A POWERDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：9.8A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH6016LPSQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 60V and a maximum junction temperature rating of +175°C. The device offers a static drain-source on-resistance (RDS(ON)) of 16mΩ at VGS=10V and 24mΩ at VGS=4.5V. Continuous drain current reaches 68A at TC=+25°C and 12.3A at TA=+25°C. Total gate charge is 17nC at VGS=10V.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Thermally efficient PowerDI5060-8 package with low profile
- Low RDS(ON) minimizes on-state power losses
- Low input capacitance enables fast switching speeds
Applications
- Automotive power management systems
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the component meets AEC-Q101 qualification standards and PPAP requirements if intended for automotive applications requiring specific change control protocols.
Selection Notes
Select this component when high ambient temperature tolerance up to 175°C is required alongside low conduction losses. The PowerDI5060-8 package provides a compact solution suitable for thin applications while maintaining robust thermal performance. Ensure the application gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance.
Part Context
This part belongs to the DMTH series of N-channel enhancement mode MOSFETs designed by Diodes Incorporated. These devices utilize silicon technology optimized for automotive environments. The series emphasizes high conversion efficiency and reliability through rigorous testing protocols including UIS testing.
Replacement Considerations
Consult official cross-reference lists or datasheets for verified substitutes. Ensure any replacement matches the 60V BVDSS, PowerDI5060-8 footprint, and +175°C thermal rating.
