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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 37.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：864 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 37.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH6016LPSWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 68A at TC = 25°C. The device offers a low on-resistance of 16mΩ at VGS = 10V and 24mΩ at VGS = 4.5V. It operates within a temperature range of -55°C to +175°C and utilizes the PowerDI® 5060-8/SWP package.
Feature Summary
- Rated for operation in high ambient temperature environments up to +175°C
- Thermally efficient package design for cooler running applications
- High conversion efficiency with minimized on-state losses
- Fast switching speed supported by low input capacitance
Applications
- Automotive power management systems
- DC-DC converters
- Motor control circuits
Procurement Notes
Verify that the specific part number matches the required automotive qualification standards, including AEC-Q101 compliance and PPAP capability. Confirm the package type corresponds to the PowerDI5060-8/SWP specification. Ensure the ordering suffix aligns with the intended tape and reel packing quantity of 2,500 units before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring robust performance in high-temperature automotive environments. The low on-resistance characteristics make it suitable for minimizing conduction losses in power management and DC-DC converter topologies. Verify that the gate drive voltage supports the specified RDS(ON) thresholds for optimal efficiency.
Part Context
This component belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive application requirements. The device integrates advanced silicon technology within a compact surface-mount package designed for high thermal dissipation and reliability in demanding electronic systems.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, package dimensions, and automotive qualification status.
