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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：29mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：452 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH6030LFDFWQ-13 is a surface-mount N-channel enhancement mode MOSFET rated for a drain-source voltage of 60V. It supports a continuous drain current of 6.2A at +25°C and operates within a junction temperature range of -55°C to +175°C. The device features a maximum on-resistance of 29mΩ at VGS=10V and 40mΩ at VGS=4.5V. Packaged in a U-DFN2020-6/SWP (Type UXG) footprint, it offers a total power dissipation of 1.4W at +25°C with a thermal resistance of 108.9°C/W.
Feature Summary
- Qualified to AEC-Q101 standards and supported by PPAP for automotive applications.
- Rated for operation up to +175°C junction temperature.
- Features wettable flank terminals and sidewall plating for improved optical inspection.
- Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Applications
- Power-management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity carrier as defined in the manufacturer's documentation. Confirm that the U-DFN2020-6/SWP package type matches the required PCB footprint dimensions. Ensure compliance with the specified moisture sensitivity level and solderability requirements before integration into the supply chain.
Selection Notes
Select this component when high ambient temperature environments require a +175°C rating. The low-profile 0.6mm design suits space-constrained layouts. Verify gate drive voltages against the 29mΩ or 40mΩ on-resistance specifications depending on the target switching frequency and efficiency requirements.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes the U-DFN2020-6/SWP package, which provides a compact 4mm² PCB footprint. The series is designed to meet stringent automotive reliability standards through IATF 16949 certified manufacturing processes.
Replacement Considerations
DMTH6030LFDFWQ-7 is a verified substitute offering identical electrical characteristics and packaging, differing only in the shipping quantity of 3,000 units per reel instead of 10,000.
