DMTH6030LFDFWQ-7

$0.14

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e8bd3441d274 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：29mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：452 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

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DMTH6030LFDFWQ-7

Overview

The DMTH6030LFDFWQ-7 is a 60V N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source on-resistance of 29mΩ at VGS=10V and 40mΩ at VGS=4.5V, with continuous drain currents of 6.2A at +25°C and 4.4A at +100°C. The device operates within a junction temperature range of -55°C to +175°C and utilizes a U-DFN2020-6/SWP package.

Feature Summary

Rated for operation up to +175°C junction temperature
100% unclamped inductive switching (UIS) tested in production
Low profile design with sidewall plating for optical inspection

Applications

Power-management functions
DC-DC converters
Backlighting

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packing quantity and carrier type. Confirm AEC-Q101 qualification status and PPAP capability requirements directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for high ambient temperature environments requiring robust UIS performance. Ensure gate drive voltage aligns with the specified RDS(ON) thresholds at 10V or 4.5V. Verify PCB footprint compatibility with the U-DFN2020-6/SWP mechanical dimensions.

Part Context

This part belongs to the DMTH series of automotive-grade N-channel MOSFETs from Diodes Incorporated. It is manufactured in IATF 16949 certified facilities and supports specific change control requirements mandated by automotive industry standards.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume functional equivalence based solely on matching electrical parameters without confirming package and thermal characteristics.