DMTH61M8LPS-13

$2.51

Description：MOSFET N-CH 60V 225A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dea7bfe8d7de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 225A PWRDI
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：225A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：115.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8320 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 187.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

Download product information

DMTH61M8LPS-13

Overview

The DMTH61M8LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 surface-mount package. At VGS = 10V, the maximum on-resistance is 1.6mΩ with a continuous drain current of 225A. At VGS = 4.5V, the resistance is 2.8mΩ with a current of 180A. Gate-source voltage limits are ±20V, and total power dissipation reaches 187.5W at case temperatures of +25°C.

Feature Summary

Engineered for high-efficiency power management with minimized on-state resistance and superior switching performance.
Rated for operation in high ambient temperature environments up to +175°C.
Manufactured using lead-free, halogen-free, and antimony-free materials compliant with RoHS directives.

Applications

Engine Management Systems
Body Control Electronics
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive applications requiring specific change control and IATF 16949 manufacturing standards. Ensure thermal design accounts for the specified junction-to-case resistance values.

Selection Notes

Select this component when low conduction losses are critical alongside robust switching capabilities. The wide operating temperature range supports demanding thermal environments. Verify gate drive voltage compatibility, as on-resistance varies significantly between 4.5V and 10V thresholds. Consider the exposed drain pad thermal characteristics for effective heat dissipation in the target PCB layout.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed specifically for automotive and industrial power management sectors where reliability under high thermal stress is required. The PowerDI5060-8 package provides a compact footprint with enhanced thermal performance compared to traditional packages.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capacities, and package dimensions to ensure functional equivalence without compromising system safety or performance.

FAQ

Is the DMTH61M8LPS-13 qualified for automotive applications?

For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200, PPAP capability, and manufacture in IATF 16949 certified facilities, contact Diodes Incorporated directly.