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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI506
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：115.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8320 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 187.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMTH61M8LPSQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +175°C. The device utilizes a PowerDI5060-8 (Type K) surface-mount package. Key electrical parameters include a maximum on-resistance of 1.6mΩ at VGS=10V and 2.8mΩ at VGS=4.5V, with continuous drain currents rated at 225A at TC=+25°C and 180A at VGS=4.5V.
Feature Summary
- Qualified to AEC-Q101 standards for automotive applications
- Rated for operation up to +175°C junction temperature
- 100% unclamped inductive switching (UIS) tested in production
- Manufactured in IATF 16949 certified facilities
Applications
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2500-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance requirements and ensure the application design accounts for the specified thermal resistance values under actual mounting conditions rather than idealized test environments.
Selection Notes
Select this component when high current handling capability is required alongside robustness against inductive load switching events. The low on-resistance minimizes conduction losses, while the extended temperature rating supports deployment in high ambient heat environments typical of modern automotive chassis and engine compartments.
Part Context
This part belongs to the DMTH series of automotive-grade power MOSFETs from Diodes Incorporated. These devices are engineered specifically for demanding automotive environments requiring strict change control protocols. The PowerDI5060-8 package provides a compact footprint suitable for space-constrained printed circuit board layouts.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Ensure any replacement maintains identical AEC-Q101 qualification status and matches the PowerDI5060-8 mechanical outline dimensions.
