DMTH61M8SPS-13

$0.71

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:4e1bc015e5c9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI506
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：215A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：130.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8306 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.2W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8 (Type K)
Package / Case：8-PowerTDFN

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DMTH61M8SPS-13

Overview

The DMTH61M8SPS-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 215A at a case temperature of +25°C. The device exhibits a static drain-source on-resistance of 1.6mΩ when driven at a gate-source voltage of 10V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 (Type K) package.

Feature Summary

Engineered for high conversion efficiency with minimized on-state losses
Rated for operation in high ambient temperature environments up to +175°C
Subjected to 100% unclamped inductive switching testing during production
Designed to maintain superior switching performance alongside low input capacitance

Applications

Engine management systems
Body control electronics
DC-DC converters
Power management circuits
Load switch applications

Procurement Notes

Verify that the specific part number matches the required automotive or industrial qualification standards, as standard and automotive-compliant variants exist under separate datasheets. Confirm compliance with RoHS 3 directives and halogen-free requirements before finalizing procurement specifications. Ensure the ordering suffix corresponds to the correct tape and reel packaging quantity.

Selection Notes

Select this component for designs requiring robust current handling capabilities within a compact surface-mount footprint. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application. Consider the gate threshold voltage and total gate charge parameters to ensure compatibility with the intended driver circuitry and switching frequency requirements.

Part Context

This device belongs to the DMTH series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-resistance while maintaining fast switching speeds. The product line targets high-efficiency power management solutions, utilizing advanced silicon technology to achieve high current density in the PowerDI5060-8 package format.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMTH61M8SPSQ. Verify if the specific application requires AEC-Q100/101/200 qualification and PPAP capability before selecting the standard or automotive variant.

FAQ

Is the DMTH61M8SPS-13 qualified for automotive applications?

The standard DMTH61M8SPS-13 does not explicitly state automotive qualification. For applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, the automotive-compliant part DMTH61M8SPSQ should be used.