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Product Detailed Parameters
- Description：MOSFET N-CH 60V 100A PWRDI5060-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：96.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4515 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.13W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type K)
- Package / Case：8-PowerTDFN
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Overview
The DMTH62M8LPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 100A at 25°C case temperature. The device offers a low on-state resistance of 2.8mΩ at VGS=10V and 4.4mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.
Feature Summary
- Rated for operation up to +175°C, suitable for high ambient temperature environments
- 100% unclamped inductive switching (UIS) tested in production for robustness
- Thermally efficient PowerDI5060-8 package with less than 1.1mm profile
- Lead-free finish compliant with RoHS directives
Applications
- Switching applications
- Synchronous rectification
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen/antimony-free status. Ensure the selected part matches the PowerDI5060-8 mechanical dimensions for PCB layout compatibility.
Selection Notes
Select this component when a 60V rating and high current handling capability near 100A are required. Consider the low on-resistance values for minimizing conduction losses in power management circuits. Evaluate the thermal performance characteristics against the expected operating environment and heat dissipation requirements of the target application.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where low thermal resistance and high reliability are critical design factors.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify electrical parameters and pin configurations before replacing existing components in a design.
