DMTH63M5LFGQ-7

Overview

The DMTH63M5LFGQ-7 is a 60V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 93A at TC = +25°C. The static drain-source on-resistance is rated at 3.8mΩ max at VGS = 10V and 6.0mΩ max at VGS = 4.5V. Total gate charge is 41.2nC at VGS = 10V. Operating temperature range extends from -55°C to +175°C.

Feature Summary

• Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
• Manufactured with 100% Unclamped Inductive Switching (UIS) testing for enhanced reliability.
• Small form factor thermally efficient package enables higher density end products.
• Occupies 33% of the board area compared to SO-8 packages.

Applications

• Synchronous rectification
• Motor controls
• DC-DC converters
• Power management

Procurement Notes

Verify AEC-Q101 qualification and PPAP capability requirements against specific automotive project standards before procurement. Confirm IATF16949 certified facility manufacturing compliance if required by the supply chain. Ensure ordering suffix matches the desired packing quantity and carrier type.

Selection Notes

Select this component for applications requiring low on-state losses and robust UIS performance. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions. Consider the small footprint benefits when designing for space-constrained automotive or industrial power systems.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade N-channel MOSFETs. It utilizes the PowerDI3333-8 surface mount package designed for high thermal efficiency. The series targets demanding automotive environments requiring extended temperature ratings and strict quality control standards.

Replacement Considerations

DMTH63M5LFGQ-13