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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V-60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：15.9A (Ta), 45.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33.5 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1925 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 29.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH69M8LFVWQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage of 60V and a maximum continuous drain current of 45.4A at 25°C case temperature. The device exhibits a low on-resistance of 9.5mΩ at VGS=10V and 13.3mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards for automotive reliability.
Feature Summary
- Rated for operation up to +175°C junction temperature, suitable for high ambient environments
- Manufactured with wettable flank terminals to facilitate improved optical inspection
- 100% unclamped inductive switching (UIS) tested in production for enhanced robustness
- Fully lead-free, RoHS compliant, and halogen/antimony free
Applications
- Automotive backlighting systems
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification and PPAP documentation standards if utilized in automotive supply chains. Ensure the selected package variant matches the intended PCB footprint and thermal management requirements.
Selection Notes
Select this component when a compact form factor is required alongside high current handling capabilities. The low on-resistance supports efficient power conversion in space-constrained designs. Consider the +175°C rating for applications experiencing elevated thermal conditions without active cooling.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs designed by Diodes Incorporated. The series targets automotive and industrial markets requiring high reliability and small footprints. The PowerDI3333-8 package provides a thermally efficient solution compared to traditional transistor packages.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
