DMTH8001STLW-13

$2.07

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ead691d910a5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI10
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：270A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：138 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8894 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：6W (Ta), 250W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI1012-8
Package / Case：8-PowerSFN

Download product information

DMTH8001STLW-13

Overview

The DMTH8001STLW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI1012-8 (TOLL) package. It features a drain-source voltage of 80V and a maximum continuous drain current of 270A at +25°C case temperature. The device exhibits a static drain-source on-resistance of 1.7mΩ max at VGS=10V. It supports a junction temperature range of -55°C to +175°C and includes wettable flank terminals for improved optical inspection.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Features wettable flank terminals to facilitate improved optical inspection during assembly
Manufactured with lead-free finish and complies with RoHS directives
Includes 100% unclamped inductive switching (UIS) testing in production

Applications

Motor control systems
DC-DC converters
Notebook battery power management
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 1500-unit tape and reel carrier configuration. Confirm that the standard commercial version matches the required application parameters, as automotive-compliant variants are documented under separate datasheets. Ensure design reviews account for the thermal resistance characteristics specified for the POWERDI1012-8 package.

Selection Notes

Select this component when applications require low on-state losses combined with superior switching performance. The device is optimized for minimizing RDS(ON) while maintaining robust handling capabilities. Consider the 80V rating and 270A current capacity relative to the specific load requirements and thermal management constraints of the target system design.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the POWERDI1012-8 surface-mount package technology. The product line focuses on providing high conversion efficiency and reliability for power management applications through advanced silicon processes.

Replacement Considerations

An automotive-compliant version of this component is available under the part number DMTH8001STLWQ. Verify if the specific environmental or quality standards required by the end application necessitate the use of the qualified automotive variant instead of the standard commercial grade.

FAQ

Is the DMTH8001STLW-13 rated for automotive applications?

No, the standard DMTH8001STLW-13 is a commercial-grade device. An automotive-compliant part is available under a separate datasheet identified as DMTH8001STLWQ.