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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9081 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3.75W (Ta), 99W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8003SPSW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features an 80 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 100 A. Its maximum on-resistance (Rds On) is specified at 3.9 mOhms. The gate-source voltage range extends from -20 V to +20 V, with a threshold voltage (Vgs th) of 2 V. Total gate charge (Qg) is 124.3 nC. The component operates within a temperature range of -55 °C to +175 °C and has a power dissipation rating of 125 W.
Feature Summary
- High current handling capability with a 100 A continuous drain current rating.
- Low on-resistance design for efficient power switching applications.
- Extended thermal stability supporting operation up to 175 °C junction temperature.
Applications
- Power distribution systems
- DC-DC converter circuits
- Motor control interfaces
Procurement Notes
Verify the specific suffix 'SPSW' against the manufacturer's official datasheet to confirm the exact tape-and-reel packaging configuration and lead frame material. Ensure that the PowerDI5060-8 footprint matches the target PCB layout dimensions precisely. Confirm RoHS compliance status through the latest product compliance documentation provided by Diodes Incorporated prior to final procurement authorization.
Selection Notes
Select this component when high current capacity is required in a compact surface-mount form factor. The 80 V rating suits applications operating below this threshold with adequate safety margins. Evaluate the 3.9 mOhm on-resistance against thermal management requirements to ensure junction temperatures remain within the specified 175 °C limit under expected load conditions.
Part Context
This part belongs to the DMTH series of MOSFETs from Diodes Incorporated, designed for general-purpose power switching. The PowerDI5060-8 package provides a balance between thermal performance and board space efficiency compared to traditional TO-220 packages. It targets modern electronics requiring robust discrete semiconductor solutions for power management tasks.
Replacement Considerations
Consult the official Diodes Incorporated cross-reference guide for verified substitutes. Ensure any replacement maintains the 80 V minimum Vds, 100 A Id rating, and compatible PowerDI5060-8 pinout to guarantee mechanical and electrical interchangeability without circuit redesign.
