DMTH8003SPSWQ-13

$0.77

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:068f824c0e81 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：3.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：136 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9081 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：3.75W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH8003SPSWQ-13

Overview

The DMTH8003SPSWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features an 80 V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 100 A. Its on-resistance (Rds On) is specified at 3.9 mOhms. The gate-source voltage range is -20 V to +20 V, with a threshold voltage (Vgs th) of 2 V. Total gate charge (Qg) is 124.3 nC. Switching characteristics include a fall time of 20.9 ns and a rise time of 24.4 ns. The component operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 125 W.

Feature Summary

High current handling capability with 100 A continuous drain current rating
Low on-resistance for efficient power conduction
Extended thermal operating range up to 175°C junction temperature
Compact PowerDI5060-8 surface-mount packaging

Applications

DC-DC converter circuits
Motor control systems
Power distribution networks

Procurement Notes

Verify the specific suffix 'Q' indicates automotive qualification status against the official datasheet. Confirm the PowerDI5060-8 package dimensions match design constraints. Ensure the manufacturer part number matches exactly to avoid confusion with non-qualified variants. Check RoHS compliance documentation for regulatory requirements.

Selection Notes

Select this component when high current capacity and low conduction losses are required in a compact footprint. The 80 V rating suits applications with moderate voltage levels. Consider the 125 W power dissipation for thermal management planning. Verify gate drive compatibility with the 2 V threshold and 124.3 nC gate charge requirements.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI5060-8 package form factor with other devices in the lineup but differs in electrical specifications such as voltage and current ratings. The series targets high-efficiency power switching applications requiring robust performance in small enclosures.