DMTH8004LPS-13

$0.66

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d097757dc3a4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4979 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH8004LPS-13

Overview

The DMTH8004LPS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 80 V and a continuous drain current (I_D) of 100 A at +25°C case temperature. The device offers a maximum on-resistance (R_DS(ON)) of 3.8 mΩ at V_GS = 10 V and 5.3 mΩ at V_GS = 4.5 V, both measured at I_D = 20 A. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 surface-mount package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Manufactured with lead-free finish and complies with RoHS directives
Verified robustness through 100% unclamped inductive switching (UIS) testing

Applications

DC-DC converters
Load switch circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement documentation.

Selection Notes

Select this component when an 80 V rating and high current handling capability are required. Ensure the gate drive voltage supports the desired R_DS(ON) performance level. Verify thermal management requirements align with the specified junction-to-case thermal resistance values for the intended operating conditions.

Part Context

This part belongs to the DMTH series of power MOSFETs from Diodes Incorporated. It is designed to minimize on-state losses while maintaining superior switching performance. The device is housed in a PowerDI5060-8 case, utilizing a molded plastic green molding compound with UL flammability classification rating 94V-0.

Replacement Considerations

Consult official manufacturer substitution lists or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility based solely on similar electrical ratings without verifying pinout and thermal characteristics.