DMTH8008LFGQ-13

$1.50

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0d0d725042c9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：37.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2254 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH8008LFGQ-13

Overview

The DMTH8008LFGQ-13 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of 80V and operates up to +175°C junction temperature. The device offers a maximum on-resistance (RDS(ON)) of 6.9mΩ at VGS=10V with a continuous drain current of 70A, or 10.4mΩ at VGS=4.5V with 57A. Packaged in a PowerDI3333-8 surface-mount format, it supports high-density designs.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Operates reliably in high ambient temperatures up to +175°C
Minimizes on-state losses through low RDS(ON) performance
Ensures robust application reliability via 100% UIS testing

Applications

Backlighting systems
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. Confirm that the component meets all necessary automotive qualification requirements, including AEC-Q101 compliance and PPAP documentation, before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring high thermal stability and compact form factors. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal management strategies considering the package's power dissipation capabilities.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes advanced silicon technology within a thermally efficient PowerDI package. The design prioritizes board space reduction while maintaining high electrical performance suitable for demanding environments.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Verify pinout compatibility and ensure replacement parts meet identical AEC-Q101 and PPAP requirements.