DMTH8008LFGQ-7

$1.49

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:76dff1ab9302 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：37.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2254 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH8008LFGQ-7

Overview

The DMTH8008LFGQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current of 70A at TC = +25°C. The device offers a low on-resistance (RDS(ON)) of 6.9mΩ at VGS = 10V and 10.4mΩ at VGS = 4.5V. Packaged in a thermally efficient PowerDI3333-8 surface-mount format, it supports junction temperatures up to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
Operates reliably in high ambient temperature environments rated to +175°C
Minimizes on-state losses through low RDS(ON) characteristics
Features excellent Qgd × RDS(ON) figure of merit for DC-DC converters

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 2,000-unit tape and reel carrier. Confirm that the component meets the necessary IATF 16949 manufacturing facility requirements if your application demands strict automotive change control protocols. Ensure compatibility with RoHS 3 directives before finalizing procurement specifications.

Selection Notes

Select this component when designing systems requiring robust performance under high thermal stress or elevated ambient temperatures. The small form factor allows for higher density end products by occupying significantly less board area compared to traditional SO-8 packages. Consider the device's excellent unclamped inductive switching (UIS) reliability for applications involving inductive loads.

Part Context

This part belongs to Diodes Incorporated's DMTH series of automotive-grade MOSFETs. It utilizes advanced silicon technology optimized for high-density power management solutions. The PowerDI3333-8 package provides a compact footprint while maintaining high thermal efficiency, making it suitable for space-constrained automotive electronics.