DMTH8008LPS-13

$0.32

Description：MOSFET N-CH 80V 91A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:aa5fb900a0de Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 91A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：41.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2345 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH8008LPS-13

Overview

The DMTH8008LPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source breakdown voltage and a maximum continuous drain current of 91A at TC = 25°C. The device exhibits a low on-resistance of 7.8mΩ at VGS = 10V and 11mΩ at VGS = 4.5V. Operating temperatures range from -55°C to +175°C. Key dynamic parameters include a total gate charge of 41.2nC at VGS = 10V, a turn-on delay time of 5.8ns, and a fall time of 43.2ns.

Feature Summary

Rated for operation up to +175°C junction temperature, suitable for high ambient environments.
Manufactured with lead-free finish, RoHS compliant, and halogen/antimony free.
Undergoes 100% unclamped inductive switching (UIS) testing in production.

Applications

DC-DC converters
Load switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel carrier configuration. Confirm that the component meets all applicable RoHS directives and environmental standards required by your manufacturing process. Ensure the selected part number matches the exact datasheet revision and electrical specifications needed for your design.

Selection Notes

Select this component when an 80V rating and low RDS(ON) are required within a compact PowerDI5060-8 footprint. Consider the thermal resistance characteristics and power dissipation limits relative to your board layout. Evaluate the gate charge and switching speeds against your driver capabilities to ensure optimal efficiency and performance.

Part Context

This single N-channel MOSFET belongs to the DMTH series designed for power management applications. It utilizes silicon technology and is packaged in a surface-mount PowerDI5060-8 format. The device is intended to minimize on-state losses while maintaining superior switching performance for efficient energy conversion.

Replacement Considerations

An automotive-compliant version is available under the separate part number DMTH8008LPSQ. Verify if AEC-Q101 qualification is necessary for your application before selecting this standard industrial grade component as a substitute.

FAQ

Is the DMTH8008LPS-13 qualified for automotive applications?

No, the DMTH8008LPS-13 is not automotive qualified. An automotive-compliant part is available under the separate datasheet and part number DMTH8008LPSQ.