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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：41.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2345 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMTH8008LPSQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source breakdown voltage and a maximum continuous drain current of 91A at TC = +25°C. The device exhibits a low on-resistance of 7.8mΩ at VGS = 10V and 11mΩ at VGS = 4.5V. It supports junction temperatures up to +175°C and includes a maximum gate-source voltage rating of ±20V.
Feature Summary
- Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
- Rated for operation in high ambient temperature environments up to +175°C.
- Manufactured in IATF 16949 certified facilities to meet specific change control requirements.
- Features 100% unclamped inductive switching (UIS) testing in production for robustness.
Applications
- DC-DC converters
- Load switches
Procurement Notes
Verify the complete part number including the -13 suffix to confirm tape and reel packaging quantities. Confirm that the application environment meets the specified thermal and electrical ratings. Ensure compliance with RoHS 3 directives and halogen-free requirements during integration. Validate component authenticity through authorized distribution channels.
Selection Notes
Select this component when designing circuits requiring high efficiency and low conduction losses in compact surface-mount layouts. Consider the PowerDI5060-8 package dimensions for PCB space constraints. Evaluate thermal management strategies based on the specified junction-to-case resistance values under steady-state conditions.
Part Context
This part belongs to the DMTH series of power MOSFETs designed by Diodes Incorporated. It utilizes silicon technology within a molded plastic green molding compound. The device integrates a single N-channel configuration optimized for high-current switching applications while maintaining low profile characteristics suitable for modern electronic assemblies.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching critical parameters such as voltage ratings, current capabilities, and package footprint to ensure functional compatibility without compromising system reliability or safety standards.
