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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：31.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMTH8008SFG-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features an 80V drain-source breakdown voltage and a maximum continuous drain current of 68A at case temperature +25°C. The device offers a low on-state resistance of 7mΩ at VGS=10V and 10.5mΩ at VGS=6V. It supports a junction temperature range of -55°C to +175°C with a thermal resistance (junction-to-case) of 3.0°C/W.
Feature Summary
- Rated for operation up to +175°C junction temperature for high ambient environments
- Low RDS(ON) minimizes conduction losses while maintaining switching performance
- Small form factor thermally efficient package enables higher density end products
- 100% Unclamped Inductive Switching (UIS) tested in production for robustness
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements by checking the official datasheet notes regarding environmental standards before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring an 80V rating with high current handling capabilities in a compact footprint. Consider the 7mΩ on-resistance for efficiency optimization at 10V gate drive. Evaluate the thermal management strategy based on the 3.0°C/W junction-to-case resistance if operating near the upper temperature limits.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs designed for power management applications. It utilizes advanced silicon technology to achieve low on-state resistance within the PowerDI3333-8 package, which occupies significantly less board area compared to traditional SO-8 packages while providing superior thermal dissipation characteristics.
Replacement Considerations
An automotive-compliant version of this component is available under the separate part number DMTH8008SFGQ. Verify if AEC-Q101 qualification is required for the target application before selecting this standard industrial grade part.
