DMTH8008SFG-7

$0.37

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:be5ad8c1eb46 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：31.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH8008SFG-7

Overview

The DMTH8008SFG is an N-channel enhancement mode MOSFET from Diodes Incorporated, rated for a drain-source voltage of 80V and operating temperatures up to +175°C. It features a maximum on-resistance of 7mΩ at VGS=10V and 10.5mΩ at VGS=6V. The device supports continuous drain currents of 68A at TC=+25°C (VGS=10V) and 48A at TC=+100°C. Packaged in the thermally efficient PowerDI3333-8 footprint, it offers a junction-to-case thermal resistance of 3.0°C/W.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Minimizes on-state losses through low RDS(ON) while maintaining superior switching performance
Features excellent Qgd × RDS(ON) Figure of Merit (FOM)
Occupies only 33% of the board area compared to SO-8 packages

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a packing quantity of 2,000 units per tape and reel, whereas the -13 suffix corresponds to 3,000 units per tape and reel. Confirm that the required package type matches the intended PCB layout before placing orders.

Selection Notes

Select this component for applications requiring high-efficiency power management within a small form factor. The PowerDI3333-8 package provides significant board space savings compared to traditional SO-8 packages. Ensure the design accounts for the specified thermal resistance values to maintain safe junction temperatures under load.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are designed using advanced technology specifically optimized for DC-DC converter applications. The series emphasizes minimizing on-state resistance without compromising switching speed.